Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system
Identifieur interne : 00C231 ( Main/Repository ); précédent : 00C230; suivant : 00C232Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system
Auteurs : RBID : Pascal:03-0351614Descripteurs français
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- 7363H, 7340K, 6320K, Etude expérimentale, Gaz électron 2 dimensions, Semiconducteur III-V, Indium composé, Aluminium composé, Gallium arséniure, Puits quantique semiconducteur, Effet Shubnikov de Haas, Interaction électron phonon, Matériau semiconducteur piézoélectrique, Structure bande, Hétérojonction semiconducteur.
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Abstract
Electron heating experiments are carried out on a two-dimensional electron gas fabricated in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure and the energy loss rates and energy relaxation times are extracted from the Shubnikov-de Haas oscillations to get a better understanding of the electron-phonon interaction in these heterostructures. The exponent of the energy loss rate dependence is used to indicate a dominant unscreened piezoelectric coupling in the temperature range of 4.2-30 K. Simulations of the quantum well band structure verify the presence of two populated subbands in this heterostructure system. The energy relaxation time is observed to be on the order of several tens of nanoseconds and its decay with temperature shows a T-3 behavior at higher temperatures and a T-1 behavior at lower temperatures. © 2003 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron heating measurements in an In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure system</title><author><name sortKey="Prasad, C" uniqKey="Prasad C">C. Prasad</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla</wicri:cityArea></affiliation></author><author><name sortKey="Ferry, D K" uniqKey="Ferry D">D. K. Ferry</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Vasileska, D" uniqKey="Vasileska D">D. Vasileska</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Wieder, H H" uniqKey="Wieder H">H. H. Wieder</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0351614</idno><date when="2003-07">2003-07</date><idno type="stanalyst">PASCAL 03-0351614 AIP</idno><idno type="RBID">Pascal:03-0351614</idno><idno type="wicri:Area/Main/Corpus">00CC92</idno><idno type="wicri:Area/Main/Repository">00C231</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Band structure</term><term>Electron-phonon interactions</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Piezoelectric semiconductors</term><term>Semiconductor heterojunctions</term><term>Semiconductor quantum wells</term><term>Shubnikov-de Haas effect</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7363H</term><term>7340K</term><term>6320K</term><term>Etude expérimentale</term><term>Gaz électron 2 dimensions</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Puits quantique semiconducteur</term><term>Effet Shubnikov de Haas</term><term>Interaction électron phonon</term><term>Matériau semiconducteur piézoélectrique</term><term>Structure bande</term><term>Hétérojonction semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electron heating experiments are carried out on a two-dimensional electron gas fabricated in an In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure and the energy loss rates and energy relaxation times are extracted from the Shubnikov-de Haas oscillations to get a better understanding of the electron-phonon interaction in these heterostructures. The exponent of the energy loss rate dependence is used to indicate a dominant unscreened piezoelectric coupling in the temperature range of 4.2-30 K. Simulations of the quantum well band structure verify the presence of two populated subbands in this heterostructure system. The energy relaxation time is observed to be on the order of several tens of nanoseconds and its decay with temperature shows a T<sup>-3</sup> behavior at higher temperatures and a T<sup>-1</sup> behavior at lower temperatures. © 2003 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electron heating measurements in an In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure system</s1></fA08><fA11 i1="01" i2="1"><s1>PRASAD (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>FERRY (D. K.)</s1></fA11><fA11 i1="03" i2="1"><s1>VASILESKA (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>WIEDER (H. H.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407</s1></fA14><fA20><s1>1936-1939</s1></fA20><fA21><s1>2003-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0351614</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Electron heating experiments are carried out on a two-dimensional electron gas fabricated in an In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure and the energy loss rates and energy relaxation times are extracted from the Shubnikov-de Haas oscillations to get a better understanding of the electron-phonon interaction in these heterostructures. The exponent of the energy loss rate dependence is used to indicate a dominant unscreened piezoelectric coupling in the temperature range of 4.2-30 K. Simulations of the quantum well band structure verify the presence of two populated subbands in this heterostructure system. The energy relaxation time is observed to be on the order of several tens of nanoseconds and its decay with temperature shows a T<sup>-3</sup> behavior at higher temperatures and a T<sup>-1</sup> behavior at lower temperatures. © 2003 American Vacuum Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C63H</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40K</s0></fC02><fC02 i1="03" i2="3"><s0>001B60C20K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7363H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6320K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Effet Shubnikov de Haas</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Shubnikov-de Haas effect</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Interaction électron phonon</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electron-phonon interactions</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Matériau semiconducteur piézoélectrique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Piezoelectric semiconductors</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Structure bande</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Band structure</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fN21><s1>246</s1></fN21><fN47 i1="01" i2="1"><s0>0332M000428</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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